CABL-UH is higher acceleration voltage model. You can select 90kV, 110kV or 130kV
Beam diameter: <1.6 nmΦ
Accerelation Voltage: 130 kV, 110 kV or 90 kV
Stage size: 8 inch wafer
It is the best model for production of DFB-Laser diode for optical communication devices and for Academic and R&D as well. We realize high resolution and high throughput with 50kV.
Beam diameter: < 2 nmΦ (for Academic and R&D)
< 3 nmΦ (for Production)
Accerelation voltage: 50kV, 30kV
Stage size: 4 inch, 6 inch ,8 inch wafer model
Crestec Corporation provides foundry service of EB lithography. We can expose fine grating patterns for DFB-LD production, and also any kind of R&D patterns. We have much experiences of EB lithography more than 20 years. Please feel free to contact us with your preferred pattern layout.